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Standards Worldwide
Standards Worldwide
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Energie- und Elektrotechnik

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Standard [CURRENT] 1988-12

DIN 4000-19:1988-12
Tabular layouts of article characteristics for transistors and thyristors

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Standard [CURRENT] 2007-01

DIN EN 62373:2007-01
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

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Standard [CURRENT] 2010-12

DIN EN 62416:2010-12
Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010

This document specifies a wafer level (Hot carrier) test for "hot" carriers on NMOS and PMOS transistors. The test has been prepared to determine whether the single transistors in a certain ©MOS ...

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Standard [CURRENT] 2023-08

DIN EN IEC 63373:2023-08
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices (IEC 63373:2022); German version EN IEC 63373:2022

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Standard [CURRENT] 1996-11

DIN EN 120003:1996-11
Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992

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Standard [CURRENT] 2007-03-01

OEVE/OENORM EN 62373:2007-03-01
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

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Standard [CURRENT] 2011-01-01

OEVE/OENORM EN 62416:2011-01-01
Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010) (german version)

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Standard [CURRENT] 2022-03

SN EN IEC 63373:2022-03
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

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Standard [CURRENT] 2006-08

SN EN 62373:2006-08
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

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Standard [CURRENT] 2010-06

SN EN 62416:2010-06
Semiconductor devices - Hot carrier test on MOS transistors

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