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IEC 60747-9:2019-11

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

German title
Halbleiterbauelemente - Teil 9: Bipolartransistoren mit isoliertem Gate (IGBTs)
Publication date
2019-11
Original language
English, French
Pages
160
Publication date
2019-11
Original language
English, French
Pages
160

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