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IEC 60747-9:2019-11
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- German title
- Halbleiterbauelemente - Teil 9: Bipolartransistoren mit isoliertem Gate (IGBTs)
- Publication date
-
2019-11
- Original language
-
English,
French
- Pages
- 160
- Publication date
-
2019-11
- Original language
-
English,
French
- Pages
- 160
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