DIN EN 62047-16:2015-12

The main components of MEMS films have certain properties such as micrometer dimensions and in some cases are manufactured using vapor deposition processes to produce the material. Thin film materials are used as the main component of MEMS films and micromachines. The deposition of a thin film must cause a common bending of the two-layer structure due to the residual stresses in the thin film. The value of the deflection is a direct function of the residual stresses in the thin film. In the case of tensile residual stresses, the deformation of the substrate is concave with the bonded thin film, whereas it is convex with a compressive residual stress. There are two types of test methods for determining the residual stress, namely the wafer curvature method and the cantilever beam deflection method. This part of EN 62047 specifies the test methods for measuring the residual stresses of thin films with thicknesses in the range of 0,01 µm to 10 µm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The layers should be deposited on a substrate with known mechanical properties of Young's modulus and Poisson's ratio. These methods are used to determine the residual stresses within thin films on substrates. The committee responsible is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.