DIN EN 60749-44:2017-04

The DIN EN 60749 series of standards contains various mechanical and climatic test methods that are specially optimized for use with semiconductor components and take into account their extremely fine structures and the special features of manufacturing these components. The structures of integrated circuits and memory components today are so fine that radiation, which can occur constantly in aircraft or space applications, can lead to damage or malfunctions. For this reason, the reliability of the components shall be tested for these highly sensitive applications and appropriate precautions or shielding shall be provided for their use. This part of DIN EN 60749 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit. Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, which are accelerated by radiation stresses, are not within the scope of this document. The responsible committee is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.