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Standard [WITHDRAWN]

DIN EN 60749-26:2014-09

VDE 0884-749-26:2014-09

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (IEC 60749-26:2013); German version EN 60749-26:2014

German title
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 26: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Human Body Model (HBM) (IEC 60749-26:2013); Deutsche Fassung EN 60749-26:2014
Publication date
2014-09
Original language
German
Pages
47

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Publication date
2014-09
Original language
German
Pages
47

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Overview

This document specifies the method for the testing, evaluation and classification of devices and microcircuits according to their susceptibility (sensitivity) to damage or functional impairment when these devices are exposed to the specified human body model (HBM) electrostatic discharges (ESD). The purpose of this document is the specification of a test method which generates repeatable HBM failures and yields HBM ESD test results that are reliable and repeatable with different test equipment and irrespective of the device. Repeatability of the data enables precise classification and comparison of HBM ESD sensitivity levels. ESD testing of semiconductor devices is carried out according to this test method, the machine model (MM) test (see DIN EN 60749-27) and other ESD test methods according to standard series DIN EN 60749. The HBM and MM test methods yield similar though not identical test results; if not stated otherwise, the HBM test method shall be used. This document has been prepared by TC 47 "Semiconductor devices" of the International Electrotechnical Commission (IEC) and adopted as a European standard. It is intended to replace DIN EN 60749-26:2007-01. The following essential technical modifications have been made with respect to DIN EN 60749-26:2007-01: a) the descriptions of oscilloscope and current transducer have been revised and updated; b) the block diagram and the description of the HBM circuit have been improved; c) the description of the approval and verification of the equipment for stress testing has been completely reformulated; d) the approval and verification of the printed circuit boards under test has been revised; e) a new clause on the determination of ringing in the current waveform has been added; f) some alternative pin combinations have been added; g) stress testing of non-supply pins against a limited number of supply pin groups (associated non-supply pins) and of non-supply pins against non-supply pins (that is I/O against I/O) with the limited number of two pin pairs (coupled non-supply pin pairs) is now permitted; h) HBM stress testing using pin pair HBM test equipment for supply pin groups which are exlusively shorted on the chip is now expressedly permitted. The responsible committee is DKE/K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.

Replacement amendments

This document replaces DIN EN 60749-26:2007-01 .

This document has been replaced by: DIN EN IEC 60749-26:2018-10; VDE 0884-749-26 .

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