Standard [CURRENT]
DIN 51456:2013-10
Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
- German title
- Prüfung von Materialien für die Halbleitertechnologie - Oberflächenanalyse von Silicium-Halbleiterscheiben (Wafer) durch Multielementbestimmung in wässrigen Analysenlösungen mittels Massenspektrometrie mit induktiv gekoppeltem Plasma (ICP-MS)
- Publication date
- 2013-10
- Original language
- German
- Pages
- 15
- Publication date
- 2013-10
- Original language
- German
- Pages
- 15
- DOI
- https://dx.doi.org/10.31030/2052901
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This document specifies a method for the determination of the mass fractions of the elements Al (aluminium), As (arsenic), Ba (barium), Be (beryllium), Ca (calcium), Cd (cadmium), Co (cobalt), Cr (chromium), Cu (copper), Fe (iron), In (indium), K (potassium), Li (lithium), Mg (magnesia), Mn (manganese), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead), Sb (antimony), Sr (strontium), Ti (titanium), V (vanadium), Zn (zinc) and Zr (zirconium) in the trace range on the surface of a silicon wafer, using mass spectrometry with inductively coupled plasma (ICP-MS) as method of determination. The method is valid for mass fractions of trace elements between 10 ng/kg up to 10 000 ng/kg (m/m) in the scanning solution. This document is only valid for silicon wafers the surface of which consists of a layer decomposable by hydrogen fluoride. This document has been prepared by Working Committee NA 062-02-21 AA "Prüfung von Prozesschemikalien für die Halbleitertechnologie" ("Testing of process materials for semiconductor technology") at the Materials Testing Standards Committee (NMP) at DIN.