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Standard [CURRENT]

DIN EN 62415:2010-12

Semiconductor devices - Constant current electromigration test (IEC 62415:2010); German version EN 62415:2010

German title
Halbleiterbauelemente - Konstantstrom-Prüfverfahren zur Elektromigration (IEC 62415:2010); Deutsche Fassung EN 62415:2010
Publication date
2010-12
Original language
German
Pages
12

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Publication date
2010-12
Original language
German
Pages
12
DOI
https://dx.doi.org/10.31030/1718571

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Overview

This document specifies an electromigration test on metal lines, vias and contact elements using the conventional constant current load for semiconductor devices. The background of electromigration testing as described in this procedure is based on the assumption that the entire electromigration failure time distribution stays intact when accelerated. Acceleration can be described by an activation energy and a current acceleration factor. The responsible Committee is K 631 "Halbleiterbauelemente" ("Semiconductor devices") of the DKE (German Commission for Electrical, Electronic and Information Technologies) at DIN and VDE.

ICS
31.080.01
DOI
https://dx.doi.org/10.31030/1718571

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