Standard
[CURRENT]
BS IEC 60747-9:2019-11-22
Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- German title
- Halbleiterbauelemente - Einzel-Halbleiterbauelemente - Bipolartransistoren mit isoliertem Gate (IGBTs)
- Publication date
-
2019-11-22
- Original language
-
English
- Pages
- 82
- Publication date
-
2019-11-22
- Original language
-
English
- Pages
- 82
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