ASTM C 863:2000

Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures

German title: Bestimmung des Oxidationswiderstandes von Siliziumkarbiderzeugnissen bei erhöhten Temperaturen
Publication date: 2000 reapproved: 2022
Original language: English
Pages: 2

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Publication date: 2000 reapproved: 2022
Original language: English
Pages: 2
DOI: https://dx.doi.org/10.1520/C0863-00R22

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Short description

1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO₂) and its attendant crystalline growth. 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

ICS

81.080

DOI

https://dx.doi.org/10.1520/C0863-00R22

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